S T M4952
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =-1.7A
Min Typ
C
Max Unit
5
-0.89 -1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
20
-V
G S
=3V
16
20
-V
G S
=10,9,8,7,6,5,4V
12
-V
G S
=2V
25
25 C
-I
D
, Drain C urrent (A)
-I
D
, Drain C urrent (A)
15
T j=125 C
10
-55 C
8
4
0
5
0
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
-V
DS
, Drain-to-S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1500
1250
2.2
1.8
C is s
F igure 2. Trans fer C haracteris tics
V
G S
=-4.5V
I
D
=-5A
C , C apacitance (pF )
R
DS(ON)
, On-Resistance
(Normalized)
1000
750
500
250
0
C rs s
0
5
10
1.4
1.0
0.6
0.2
0
C os s
15
20
25
30
-50
-25
0
25
50
75
100
125
-V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
