S TM4532
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
C ondition
Min
Unit
V
S ymbol
b
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
V
G S = 0V, Is =1.7A N-C h
G S = 0V, Is =-1.7A P -C h
0.77
1.2
Diode F orward Voltage
V
S D
V
-1.2
-0.82
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
N-C hannel
25
20
15
10
10
VG S =10,9,8,7,6,5,4,3V
8
6
4
25 C
Tj=125 C
5
VG S =1.5V
10
2
0
-55 C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
12
0
2
4
6
8
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.8
1.6
1.4
1.2
1200
1000
800
VG S =10V
ID=6A
600
400
C iss
1.0
0.8
200
0
C oss
C rss
0.6
-55
25
100
-25
0
50
75
125
0
2
4
6
8
10
12
VDS , Drain-to S ource Voltage (V)
TJ , J unction Temperature ( C )
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
Figure 3. C apacitance
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
