S TM4532
=
P -C hannel E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
Typ C Max
P arameter
C ondition
Min
-30
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1
-1.5
45
V
G ate Threshold Voltage
V
DS =VG S , I
= -250uA
D
-2.5
55
m ohm
=
=
V
V
V
V
GS -10V, I
D
-4.9A
Drain-S ource On-S tate R esistance
R
DS (ON)
m ohm
85
GS =-4.5V, I
D
= -3.6A
75
-12
4
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
Forward Transconductance
=
DS -15V, I - 4.9A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
393
P
P
P
F
F
F
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
116
45
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
13
Turn-On Delay Time
t
D(ON)
ns
ns
ns
ns
nC
nC
V
R
D
L
= -15V,
ohm
= 15
R ise Time
tr
4.7
47.1
17
I
D
= -1A,
G E N = -10V,
G E N = 6
Turn-Off Delay Time
Fall Time
tD(OFF)
V
R
ohm
tf
V
V
DS =-15V, I
DS =-15V, I
D
=-4.9A,VG S =-10V
15.6
7.3
Q
g
Total G ate C harge
D
=-4.9A,VGS =-4.5V
2.4
G ate-S ource C harge
G ate-Drain C harge
nC
nC
Q
Q
gs
V
V
DS =-15V, I
G S =-10V
D
= - 4.9A,
3.3
gd
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
