STM4460
Ver 1.0
72
60
75 C
20.0
Is, Source-drain current(A)
I
D
=7A
10.0
25 C
R
DS(on)
(m
Ω
)
48
125 C
36
25 C
24
12
0
125 C
75 C
0
2
4
6
8
10
1.0
0.2
0.5
0.8
1.1
1.4
1.7
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
750
C, Capacitance(pF)
Ciss
600
450
300
150
0
0
Crss
5
10
15
20
25
30
Coss
8
6
4
2
0
0
V
DS
=20V
I
D
=7A
2
4
6
8
10
12
14 16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
220
60
L
N)
im
it
1m
10
m
s
10
s
TD(off )
I
D
, Drain Current(A)
Switching Time(ns)
100
60
10
10
R
D
O
S
(
0u
s
Tr
TD(on)
Tf
1
V
G S
=10V
S ingle P ulse
T c=25 C
DC
1
1
VDS=20V,ID=7A
VGS=10V
0.1
60 100
300 600
0.1
6 10
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jun,18,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
