STM4460
Ver 1.0
30
V
GS
=4.5V
V
GS
=10V
20
I
D
, Drain Current(A)
I
D
, Drain Current(A)
24
V
GS
=4V
18
V
GS
=3.5V
15
10
25 C
5
Tj=125 C
-55 C
0
12
V
GS
=3V
6
V
GS
=2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
50
40
30
V
GS
=10V
20
10
1
Figure 2. Transfer Characteristics
1.5
1.4
R
DS(on)
, On-Resistance
Normalized
1.3
1.2
1.1
1.0
0.0
R
DS(on)
(m
Ω
)
V
GS
=4.5V
V
GS
=4.5V
I
D
=6A
V
GS
=10V
I
D
=7A
1
6
12
18
24
30
0
25
50
75
100
125
150
T j (
°C )
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.3
I
D
=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
V
DS
=V
GS
I
D
=250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
3
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,18,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
