STM4460
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
40V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
I
D
7A
R
DS(ON)
(m
Ω
) Max
32
@
VGS=10V
45
@
VGS=4.5V
D
D
5
6
7
8
4
3
2
1
G
S
S
S
S O-8
1
D
D
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
b
a
T
A
=25°C
T
A
=70°C
d
Limit
40
±20
7
5.6
28
9
Units
V
V
A
A
A
mJ
W
W
°C
-Pulsed
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
T
A
=25°C
T
A
=70°C
2.5
1.6
-55 to 150
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
50
°C/W
Details are subject to change without notice.
Jun,18,2008
1
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