STM4470E
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ
C
Max Unit
0.73
1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
60
50
V
G S
=3.5 V
V
G S
=4V
40
V
G S
=10V
20
16
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
T j =125 C
12
30
20
10
0
V
G S
=3V
8
-55 C
4
25 C
V
G S
=2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
24
1.75
Figure 2. Transfer Characteristics
R
DS(ON)
, On-Resistance
Normalized
20
1.60
1.45
1.30
1.15
1.0
0
V
GS
=10V
I
D
=10A
R
DS(on)
(m
ı
)
16
V
GS
=4.5V
12
8
4
1
1
V
GS
=4.5V
I
D
=6A
V
GS
=10V
10
20
30
40
50
60
0
25
50
75
100
125
150
Tj( C)
I
D
, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3
Figure 4. On-Resistance Variation with
Drain Current and Temperature
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
