STM4470E
SamHop Microelectronics Corp.
May. 15 2007 ver1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
40V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
I
D
9.5A
R
DS(ON) ( m
ı
Ω
) Max
12 @ V
GS
= 10V
15 @ V
GS
= 4.5V
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
@T
J
=25 C
b
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
40
20
9.5
39
1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
1
50
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
