STM4470E
ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
c
Condition
V
GS
=0V, I
D
= 250uA
V
DS
=32V, V
GS
= 0V
V
GS
= 20V, V
DS
=0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 6A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
=10A
Min Typ
C
Max Unit
40
1
10
1
1.7
10
12
20
25
1500
220
150
23
22
88
27
28
12.5
3
6
3
V
uA
uA
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
12
m ohm
15
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
c
V
DS
=20V, V
GS
= 0V
f =1.0MH
Z
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
t
D(OFF)
t
Q
g
Q
gs
Q
gd
2
V
DD
= 15V
I
D
= 1A
V
GS
= 10V
R
GEN
= 6 ohm
V
DS
=15V, I
D
= 10A,V
GS
=10V
V
DS
=15V, I
D
= 10A,V
GS
=4.5V
V
DS
=15V, I
D
= 10A
V
GS
=10V
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
