STG8205
Ver 1.0
90
75
60
20.0
Is, Source-drain current(A)
I
D
=6A
10.0
R
DS(on)
(m
Ω
)
75 C
45
125 C
30
15
0
25 C
5.0
25 C
125 C
75 C
1.0
0
0.5 1.0
1.5 2.0
2.5 3.0 3.5 4.0
4.5
0
0.4
0.8
1.2
1.6
2.0
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5
4
3
2
1
0
V
DS
= 10V
I
D
=6 A
750
600
450
300
Crss
150
0
Coss
Ciss
V
GS
, Gate to Source Voltage(V)
C, Capacitance(pF)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14 16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
60
I
D
, Drain Current(A)
L
N)
im
it
10
0u
Switching Time(ns)
100
Tr
TD(off)
TD(on)
Tf
10
R
D
S
(O
1m
10
1 0
ms
0m
s
s
s
10
1
V
G S
=4.5V
S ingle P ulse
T
A
=25 C
1
DC
1
1
VDS=10V,ID=1A
VGS=4.5V
6
10
60 100
0.1
0.1
10
30 50
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,17,2009
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
