STG8205
Ver 1.0
90
75
60
20.0
10.0
5.0
ID=6A
75 C
45
30
15
125 C
25 C
75 C
125 C
25 C
0
0
1.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, Gate-to-Source Voltage(V)
0
0.4
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
5
VDS =10V
4
750
600
ID=6 A
3
450
300
Ciss
2
Coss
Crss
1
0
150
0
0
2
4
6
8
10
12
6
0
2
4
8
10
12
14 16
Qg, Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
10
60
10
t
i
m
i
L
)
N
1
0
O
0
(
u
R DS
s
1
s
m
s
Tf
Tr
1
0
m
s
1
0
0
TD(off)
m
TD(on)
1
D
C
V
G S =4.5V
VDS=10V,ID=1A
VGS=4.5V
S ingle P ulse
=25 C
1
1
0.1
T
A
0.1
1
10
30 50
6
10
60 100
VDS, Drain-Source Voltage(V)
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,17,2009
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4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
