STG8205
Ver 1.0
°
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
)
(
Parameter
Min
Symbol
Conditions
Typ
Max Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= 10V , VDS=0V
20
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
nA
1
100
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
0.8
21
26
1.5
26
35
0.5
VGS(th)
RDS(ON)
gFS
VDS=VGS , ID=250uA
VGS=4.5V , ID=6A
VGS=2.5V , ID=5.1A
VDS=5V , ID=6A
V
m ohm
m ohm
S
Drain-Source On-State Resistance
Forward Transconductance
26
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
CISS
410
135
114
VDS=10V,VGS=0V
f=1.0MHz
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
Rise Time
ns
ns
ns
14
37
19
VDD=10V
ID=1A
t
r
VGS=4.5V
RGEN=10 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
ns
28
t
f
nC
Qg
8.8
1.4
4.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=10V,ID=6A,
VGS=4.5V
Qgs
Qgd
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
2.0
1.2
Maximum Continuous Drain-Source Diode Forward Current
b
A
V
0.815
Diode Forward Voltage
VSD
VGS=0V,IS=2.0A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Sep,17,2009
www.samhop.com.tw
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
