S T G 2017
1.3
1.15
1.10
1.05
V
DS =V G S
ID=250uA
1.2
ID=250uA
1.1
1.0
0.9
1.00
0.95
0.90
0.85
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
with T emperature
30
20
10
25
20
15
10
1
5
0
T
J
=25 C
1.2
V
DS =5V
0
12
0.4
0.6
0.8
1.0
1.4
0
3
6
15
9
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
5
V
DS =10V
=5A
t
i
m
i
L
)
4
3
2
I
D
10
1
N
O
(
1
0
R DS
m
1
s
0
0
m
s
1
s
1
D
C
V
G S =4.5V
1
0
0.1
S ingle P ulse
T c=25 C
0.03
0.1
1
10 20
50
0
2
4
10 12 14 16
6
8
Qg, T otal G ate C harge (nC )
V
DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
