S TG 2017
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
20
V
BVDS S
uA
uA
I
I
DS S
G S S
V
V
DS 16V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
10V,VDS 0V
=
10
=
b
ON C HAR AC TE R IS TIC S
1.5
20
28
V
G S (th)
0.5
0.7
16.5
23
V
G ate Threshold Voltage
V
DS =VG S , I
= 250uA
D
m ohm
=
=
V
V
G S 4.5V, I
D
D
5A
Drain-S ource On-S tate R esistance
R
DS (ON)
=
G S 2.5V, I
= 3A
m ohm
gFS
12
Forward Transconductance
=
=
5A
S
V
DS
5V, I
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
999
P
P
P
F
F
F
C
IS S
V
DS =8V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
234
144
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
Turn-On Delay Time
7.6
t
D(ON)
ns
ns
V
DD = 10V,
= 1A,
G E N = 4.5V,
I
D
11.2
R ise Time
tr
V
R
R
40.2
19.1
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
ns
nC
L
= 10 ohm
G E N = 10 ohm
tf
Q
g
11.5
2.4
4
Total G ate C harge
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =10V, I
G S =4.5V
D
= 5A,
Q
Q
gs
nC
nC
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
