S TG 2017
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
0.8
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
15
12
9
20
VG S =2.5V
16
12
V
G S =4.5,4,3V
6
8
4
0
VG S =2V
Tj=-55 C
125 C
25 C
3
0
0.0
0.5
1.5
2.0
2.5
3.0
1.0
0
1
2
3
4
6
5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
2.2
1.8
V
G S =4.5V
=5A
1500
I
D
C iss
1200
900
1.4
1.0
600
0.6
0.2
0
300
0
C oss
C rss
0
4
8
12
16
20
24
-50 -25
0
25
50
100 125
Tj( C )
75
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
