STU666S
STD666S
Ver 1.0
20
10
5
360
300
240
180
120
60
ID=3A
125 C
75 C
125 C
25 C
75 C
25 C
1
0
0
0
0.3
0.6
0.9
1.2
1.5
2
4
6
8
10
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
720
600
480
360
240
120
0
10
V
DS=30V
=3A
8
6
4
2
0
Ciss
I
D
Coss
Crss
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
Qg, Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
100
10
100
10
1
TD(off)
1
m
(ON) Limit
s
RDS
1
0
ms
D
TD(on)
C
1
V
GS=10V
VDS=30V,ID=1A
VGS=10V
Single Pulse
T
C=25 C
0.1
100
1
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Ω
Rg, Gate Resistance( )
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,15,2013
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4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
