STU666S
STD666S
Ver 1.0
15
12
9
15
12
9
VGS=10V
VGS=4.5V
VGS=4V
VGS=3.5V
-55 C
Tj=125 C
6
6
25 C
VGS=3V
2.5
3
3
0
0
0
0.5
1
1.5
2
3
4.8
0
0.8
1.6
2.4
3.2
4.0
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
240
200
160
120
80
2.25
2.00
1.75
1.50
1.25
1.00
0
V
G S =10V
=3A
I
D
VG S =4.5V
VG S =10V
V
G S =4.5V
I
D
=2.7A
40
1
0.1
3
6
9
12
15
0
150
25
50
75
100
125
°
Tj( C )
ID, Drain Current(A)
°
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.15
ID=250uA
V
DS =V G S
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.10
1.05
1.00
0.95
I
D=250uA
0.90
0.85
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75 100 125 150
°
°
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,15,2013
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
