STU666S
STD666S
Ver 1.0
°
)
(
ELECTRICAL CHARACTERISTICS TC=25 C unless otherwise noted
Parameter
Symbol
Conditions
Typ
Min
Max
Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
60
V
BVDSS
IDSS
uA
nA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
1
IGSS
±100
ON CHARACTERISTICS
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VGS=4.5V , ID=2.7A
VDS=10V , ID=3A
1
3
Gate Threshold Voltage
VGS(th)
V
1.7
81
93
15
m ohm
101
126
RDS(ON)
gFS
Drain-Source On-State Resistance
m ohm
S
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
494
41
CISS
VDS=25V,VGS=0V
f=1.0MHz
COSS
CRSS
30
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
Rise Time
ns
ns
ns
ns
10.3
10.7
19
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
t
r
tD(OFF)
Turn-Off Delay Time
Fall Time
t
f
8.4
7.2
3.8
1.1
2.1
VDS=30V,ID=3A,VGS=10V
VDS=30V,ID=3A,VGS=4.5V
nC
nC
nC
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
VDS=30V,ID=3A,
VGS=10V
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
0.82
1.3
V
VGS=0V,IS=2A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
°
d.Starting TJ=25 C,L=0.5mH,VDD = 30V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Jul,15,2013
www.samhop.com.tw
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
