STU/D650S
Ver 1.2
20.0
10.0
5.0
180
150
120
90
I
D
=8A
25 C
125 C
25 C
125 C
75 C
60
75 C
30
0
1.0
0
0
0.25
0.50
0.75
1.00
1.25
2
4
6
8
10
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
1000
10
V
I
DS=30V
=8A
8
6
Ciss
D
800
600
400
200
0
4
2
0
Coss
Crss
10
15
20
25
30
0
5
0
2
4
6
8
10 12 14 16
Qg, Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
80
10
300
100
1
0
0
us
it
m
i
L
1m
N)
TD(off)
s
(O
10m
R DS
s
DC
TD(on)
Tf
10
1
V
GS=10V
Single Pulse
=25 C
VDS=30V,ID=1A
VGS=10V
T
A
0.1
1
100
1
10
1
10
0.1
65
VDS, Drain-Source Voltage(V)
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,±3,±212
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