STU/D650S
Ver 1.2
°
)
(
ELECTRICAL CHARACTERISTICS TC=±5 C unless otherwise noted
Parameter
Min
Max
Symbol
Conditions
Typ
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS=2V , ID=±52uA
VDS=5±V , VGS=2V
VGS= ±±2V , VDS=2V
65
V
1
±122
uA
nA
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
1
1.8
62
7±
19
3
75
97
VGS(th)
RDS(ON)
gFS
VDS=VGS , ID=±52uA
VGS=12V , ID=8A
VGS=4.5V , ID=7A
VDS=12V , ID=8A
V
m ohm
m ohm
S
Drain-Source On-State Resistance
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
8±5
53
42
CISS
COSS
CRSS
VDS=±5V,VGS=2V
f=1.2MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
ns
ns
ns
17
14
±9
11
13
VDD=32V
ID=1A
VGS=12V
RGEN= 6 ohm
t
r
tD(OFF)
t
f
ns
VDS=32V,ID=8A,VGS=12V
VDS=32V,ID=8A,VGS=4.5V
nC
nC
nC
nC
Qg
Total Gate Charge
6.5
1.7
3.5
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=32V,ID=8A,
VGS=12V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
2.78
1.3
VGS=2V,IS=1A
V
Notes
_
a.Surface Mounted on FR4 Board,t < 12sec.
_
_
b.Pulse Test:Pulse Width < 322us, Duty Cycle < ±%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=±5 C,L=2.5mH,VDD = 32V.(See Figure13)
°
Sep,±3,±212
www.samhop.com.tw
±
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
