STU/D650S
Ver 1.2
25
20
16
12
8
VGS=10V
20
VGS=4V
VGS=4.5V
Tj=125 C
15
10
5
VGS=3.5V
-55 C
25 C
VGS=3V
2.5
4
0
0
0
2
3
4
5
6
1
1.5
2
3
0
0.5
1
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
180
150
2.0
1.8
1.6
1.4
1.2
1.0
0
V
GS =10V
=8A
I
D
120
90
VGS =4.5V
VGS =10V
V
GS =4.5V
=7A
60
I
D
30
1
1
5
10
15
20
25
0
25
50
75
100
125
150
°
Tj( C )
ID, Drain Current(A)
°
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.15
1.6
ID=250uA
V
DS =VG S
1.4
1.2
1.0
0.8
0.6
1.10
1.05
1.00
0.95
I
D=250uA
0.90
0.85
0.4
0.2
-50
0
25 50
-25
75 100 125 150
-50
-25
0
25 50 75 100 125 150
°
°
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,±3,±212
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