S T U/D419S
-V
G S
, G ate to S ource V oltage (V )
4800
4000
10
8
6
4
2
0
V
DS
=-15V
I
D
=-14A
C is s
C , C apacitance (pF )
3200
2400
1600
C os s
800
C rs s
0
0
5
10
15
20
25
30
6
0
12.5 25 37.5 50 62.5 75
Qg, T otal G ate C harge (nC )
87.5 100
-V
DS
, Drain-to S ource Voltage (V )
F igure 9. C apacitance
F igure 10. G ate C harge
6000
S witching T ime (ns )
I
D
, Drain C urrent (A)
140
10
R
D
S
)
(O N
L im
it
10
1000
600
100
T D(off)
ms
10
0m
Tf
Tr
s
1
1s
DC
T D(on)
10
1
3
6 10
VDS=-15V,ID=-14A
VGS=-10V
0.1
0.03
V
G S
=-10V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
60 100 300 600
R g, G ate R es is tance (
Ω
)
-V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe
O perating Area
2
r(t),Normalized E ffective
T ransient T hermal Impedance
1
D=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
S ING LE P ULS E
0.01
10
-5
-4
-3
-2
-1
t
1
t
2
1.
2.
3.
4.
10
10
10
R
J A
(t)=r (t) * R
J A
R
J A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
J A
(t)
Duty C ycle, D=t
1
/t
2
1
10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
