S TU/D419S
1.15
1.10
1.6
VDS =VG S
ID=-250uA
1.4
ID=-250uA
1.2
1.0
0.8
0.6
1.05
1.00
0.95
0.90
0.85
0.4
0.2
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
30
20.0
125 C
25 C
ID=-14A
125 C
75 C
15.0
10.0
25
20
25 C
5.0
15
10
5
0
75 C
1.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
-VGS , Gate-S ource Voltage (V)
-VS D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4