S TU/D419S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
A
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
C ondition
Min
Unit
V
S ymbol
a
-1.2
-0.7
Diode Forward Voltage
VS D
VG S = 0V, Is = -10A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
50
20
15
VGS =-10V
40
V
GS =-4.5V
VGS =-2.5V
30
10
5
20
10
0
-55 C
VGS =-2V
1
Tj=125 C
25 C
2.0
0
0
0.5
1.0
1.5
2.5
3.0
0
0.5
1
2
3
1.5
2.5
-VDS , Drain-to-S ource Voltage (V)
-VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.8
24
20
16
1.6
1.4
VGS =-10V
ID=-14A
12
8
VGS =4.5V
VGS =10V
1.2
VGS =-4V
ID=-10A
1.0
0.8
4
0
100
150
1
50
75
5
10
15
20
25
0
125
25
Tj( C)
-ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
