STB/P434S
Ver 1.0
30
25
20
60
Is, Source-drain current(A)
I
D
=30A
20
125 C
25 C
R
DS(on)
(m
Ω
)
125 C
15
10
75 C
5
0
25 C
10
0
2
4
6
8
10
1
0
0.24
0.48
0.72
0.96
1.20
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
0
3
6
9
12
18
21
24 27
Qg, Total Gate Charge(nC)
V
GS
, Gate to Source Voltage(V)
1500
C, Capacitance(pF)
C
iss
1200
900
600
Css
o
300
V
S
=0
D
2V
I
D
=0
3A
C
rss
0
0
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
500
I
D
, Drain Current(A)
100
R
DS
Switching Time(ns)
100
TD(off)
Tr
Tf
(O
L
N)
im
it
1m
10
DC
10
0u
s
s
TD(on)
ms
10
10
1
1
VDS=20V,ID=1A
VGS=10V
3
10
100
1
0.1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
10
40
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,14,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
