STB/P434S
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
1
±100
uA
nA
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
40
V
GS
= ±20V , V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=30A
V
GS
=4.5V , I
D
=25A
V
DS
=10V , I
D
=30A
1.3
1.7
7.6
8.8
18
3
9.2
11.5
V
m ohm
m ohm
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=20V,V
GS
=0V
f=1.0MHz
1160
211
135
V
DD
=20V
I
D
=1A
V
GS
=10V
R
GEN
=3.3 ohm
V
DS
=20V,I
D
=30A,V
GS
=10V
V
DS
=20V,I
D
=30A,V
GS
=4.5V
V
DS
=20V,I
D
=30A,
V
GS
=10V
17
24
59
11
20
10
2.1
5
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Diode Forward Voltage
b
10
0.84
1.3
A
V
V
GS
=0V,I
S
=10A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,V
DD
= 20V.(See Figure13)
Nov,14,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
