STB/P434S
Ver 1.0
100
V
G S
=10V
V
G S
=4V
V
G S
=3.5V
60
80
60
I
D
, Drain Current(A)
I
D
, Drain Current(A)
48
36
-55 C
24
T j=125 C
12
0
25 C
40
V
G S
=3V
20
V
G S
=2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
20
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0
V
GS
=4.5V
I
D
=25A
V
GS
=10V
I
D
=30A
16
12
V
GS
=4.5V
8
V
GS
=10V
4
1
1
20
40
60
80
100
R
DS(on)
, On-Resistance
Normalized
R
DS(on)
(m
Ω
)
0
25
50
75
100
125
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
150
T j (
°C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.40
I
D
=250uA
1.30
1.20
1.10
1.00
0.90
0.80
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,14,2008
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
