S TU/D426S
1.15
1.10
1.3
V
DS =VG S
ID=250uA
1.2
I
D=250uA
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, J unction Temperature ( C )
Tj, J unction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
30
20.0
ID=9A
25
20
10.0
5.0
75 C
15
10
125 C
75 C
125 C
25 C
5
0
25 C
1.0
0
2
4
6
8
10
0.72
0.96
1.2
0.24
0.48
0
VGS , Gate- S ource Voltage (V)
V
S D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4