S TU/D426S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ C Max
Parameter
C ondition
Min
Unit
V
S ymbol
5
OFF CHAR ACTE R IS TICS
V
GS 0V, I
D
= 250uA
= 10mA
=
Drain-S ource Breakdown Voltage
Drain-S ource Breakdown Voltage d
40
45
BVDS S
BVDS S
V
V
GS 0V, ID
=
V
uA
=
=
I
DS S
DS 32V, VGS 0V
Zero Gate Voltage Drain Current
1
V
GS
20V, VDS 0V
=
=
Gate-Body Leakage
I
GS S
100
nA
a
ON CHAR ACTE R IS TICS
1.6
1
3
V
GS (th)
V
G ate T hres hold Voltage
V
V
V
V
V
DS =VGS , I
= 250uA
D
10
12
8
m ohm
m ohm
=
=
GS 10V, I
GS =4.5V, I
DS = 10V, VGS = 10V
D
10A
Drain-S ource On-S tate R es is tance
R
DS (ON)
10
D
= 5A
30
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
26
Forward Transconductance
=
=
10V, I 10A
DS
D
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
1600
P
P
P
F
F
F
C
IS S
V
DS =15V, VGS = 0V
Output C apacitance
C
C
OS S
R S S
280
150
f =1.0MH
Z
R everse Transfer Capacitance
Gate resistance
R g
V
GS =0V, VDS = 0V, f=1.0MH
Z
0.3
ohm
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
t
D(ON)
ns
ns
ns
20
V
DD = 15V
= 1 A
GS = 10V
GE N = 6 ohm
I
D
tr
R ise Time
21
45
16
V
R
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
V
V
DS =15V, I
D
=10A,VGS =10V
=10A,VGS =4.5V
nC
nC
Q
g
32
Total Gate Charge
15
DS =15V, I
D
nC
nC
Q
Q
gs
Gate-S ource Charge
Gate-Drain Charge
3.5
7.3
V
V
DS =15V, I
GS =10V
D
= 10A
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
