S TU/D426S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VG S = 0V, Is = 20A
0.95
V
S D
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
<
-
t
c. S artin
C,
=
L
g
=
(
)
15
2
5
T =
J
I
<
AS
A, VDD
25
Ω
,
20
V
(
F
0 5
.
<
)
m
H,
R
G
=
DSS See igure
BR
d.
Pulse Test:Pulse Width -1us, Duty C ycle -1 %.
60
20
15
V
GS =4
V
25 C
Tj=1
50
40
30
VGS
=4
.5V
-55 C
GS
V
=
10V
10
5
20
10
0
VGS =3V
V
GS =2.5V
2.5
0
4.8
4.0
2.4
3.2
1.6
0.8
0
0
0.5
1
2
3
1.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0
15
12
9
VGS =4.5V
VGS =10V
V
GS =10V
=10A
I
D
6
V
GS =4.5V
=5A
I
D
3
1
150
0
25
125
50
100
1
75
12
24
36
48
60
Tj( C)
ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and Gate Voltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
