S DP /B55N02
1.06
1.10
1.05
ID=250uA
V
DS =V G S
1.04
I
D=250uA
4
1.00
0.95
0.90
1.02
1.00
0.98
0.96
0.94
0.85
0.80
0.75
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hreshold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
50
40
30
20
50
10
1.0
0.1
V
DS =10V
10
0
0
10
20
30
40
0.4
0.6
0.8
1.0
1.2
1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
60
10
1
t
i
0
0
m
μ
i
s
L
V
DS =10V
10
1
1
m
)
N
s
8
6
O
(
1
0
I
D=30A
R DS
m
s
1
0
0
m
s
D
C
4
V
G S =10V
S ingle P ulse
T c=25 C
2
0
0.1
0.1
1
10
30 60
0
3
6
9
12
15
18
21 24
V DS , Drain-S ource V oltage (V )
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
