S DP /B55N02
=
E LE C T R IC AL C HAR AC T E R IS T IC S (T
C
25 C unless otherwise noted)
TypC Max
4
P arameter
C ondition
Min
20
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 16V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
10
=
=
G S
8V,
V
DS 0V
=
100
=
a
ON C HAR AC TE R IS TIC S
0.9
40
1.5
19
V
G S (th)
1
V
G ate Threshold Voltage
V
V
DS =VG S , I
= 250uA
D
R
DS (ON)
m ohm
Drain-S ource On-S tate R esistance
14
G S = 4.5V, I = 21A
D
V
V
DS = 10V, VG S = 10V
= 26A
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
53
Forward Transconductance
DS = 10V, I
D
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
1100
600
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
180
S WITC HING C HAR AC TE R IS TIC S b
Turn-On Delay Time
t
D(ON)
50
ns
ns
V
DD = 10V,
= 1A,
I
D
R ise Time
tr
62.5
V
R
G S = 10V
G E N = 6
Turn-Off Delay Time
Fall Time
tD(OFF)
ohm
200
89
ns
ns
tf
nC
Q
g
18.2
Total G ate C harge
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =10V, I
G S =4.5V
D
= 30A,
Q
Q
gs
5.3
2.2
nC
nC
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
