S DP /B55N02
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
4
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
a
Diode F orward Voltage
V
S D
V
G S = 0V, Is =26A
1.3
0.9
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
80
70
75
60
45
30
-55 C
VG S =10,9,8,7,6,5,4V
60
50
40
30
25 C
VG S =3V
20
15
TJ =125 C
10
0
0
0
1
2
3
4
5
6
0
0.5
1.0
1.5
2.0
2.5
3.0
VG S , G ate-to-S ource Voltage (V)
VDS , Drain-to-S ource Voltage (V)
Figure 2. Transfer C haracteristics
Figure 1. Output C haracteristics
1.60
1.40
3000
I
V
D
=26A
G S =10V
2500
2000
1500
1.20
1.00
C iss
1000
500
0
0.80
0.60
0.40
C oss
C rss
0
5
10
15
20
25
30
-50 -25
0
25 50
75 100 125 150
VDS , Drain-to S ource Voltage (V)
T j, J unction T emperature ( C )
Figure 3. C apacitance
Figure 4. On-R esistance Variation
Temperature
with
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
