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BR24G256-3E2 参数 Datasheet PDF下载

BR24G256-3E2图片预览
型号: BR24G256-3E2
PDF下载: 下载PDF文件 查看货源
内容描述: 串行EEPROM系列标准EEPROM [Serial EEPROM Series Standard EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 33 页 / 490 K
品牌: ROHM [ ROHM ]
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Datasheet  
BR24G256-3  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Vcc  
Rating  
Unit  
V
Remark  
Supply Voltage  
-0.3 to +6.5  
450 (SOP8)  
Derate by 4.5mW/°C when operating above Ta=25°C  
Derate by 4.5mW/°C when operating above Ta=25°C  
Derate by 3.0mW/°C when operating above Ta=25°C  
Derate by 3.3mW/°C when operating above Ta=25°C  
Derate by 8.0mW/°C when operating above Ta=25°C  
450 (SOP-J8)  
300 (SSOP-B8)  
330 (TSSOP-B8)  
800 (DIP-T8)  
-65 to +150  
Power Dissipation  
Pd  
mW  
Storage Temperature  
Tstg  
Topr  
°C  
°C  
Operating Temperature  
-40 to +85  
The Max value of input voltage/output voltage is not over 6.5V.  
When the pulse width is 50ns or less, the Min value of input  
voltage/output voltage is not lower than -1.0V.  
Input Voltage /  
Output Voltage  
-0.3 to Vcc+1.0  
150  
V
Junction  
Temperature  
Tjmax  
°C  
Junction temperature at the storage condition  
Memory Cell Characteristics (Ta=25°C , Vcc=1.6V to 5.5V)  
Limit  
Typ  
Parameter  
Unit  
Min  
1,000,000  
40  
Max  
-
-
Write Cycles (1)  
-
-
Times  
Years  
Data Retention (1)  
(1) Not 100% TESTED  
Recommended Operating Ratings  
Parameter  
Power Source Voltage  
Input Voltage  
Symbol  
Vcc  
VIN  
Rating  
1.6 to 5.5  
0 to Vcc  
Unit  
V
DC Characteristics  
(Unless otherwise specified, Ta=-40°C to +85°C  
, VCC=1.6V to 5.5V)  
Limit  
Parameter  
Symbol  
Unit  
Conditions  
Min  
0.7Vcc  
-0.3(2)  
0.8Vcc  
-0.3(2)  
-
Typ  
Max  
Vcc+1.0  
+0.3VCC  
Vcc+1.0  
+0.2Vcc  
0.4  
Input High Voltage1  
Input Low Voltage1  
Input High Voltage2  
Input Low Voltage2  
Output Low Voltage1  
Output Low Voltage2  
VIH1  
VIL1  
VIH2  
VIL2  
VOL1  
VOL2  
ILI  
-
-
-
-
-
-
-
-
V
V
1.7VVCC5.5V  
1.7VVCC5.5V  
V
1.6VVCC1.7V  
V
1.6VVCC1.7V  
V
IOL=3.0mA, 2.5VVCC5.5V (SDA)  
IOL=0.7mA, 1.6VVCC2.5V (SDA)  
VIN=0 to Vcc  
-
0.2  
V
Input Leakage Current  
Output Leakage Current  
-1  
+1  
µA  
µA  
ILO  
-1  
+1  
VOUT=0 to Vcc (SDA)  
VCC=5.5V, fSCL=400kHz, tWR=5ms,  
Byte write, page write  
Vcc=5.5V, fSCL=400kHz  
Random read, current read, sequential read  
VCC=5.5V, SDASCL=Vcc  
A0,A1,A2=GND,WP=GND  
Supply Current (Write)  
Supply Current (Read)  
Standby Current  
ICC1  
ICC2  
ISB  
-
-
-
-
-
-
2.5  
0.5  
2.0  
mA  
mA  
µA  
(2) When the pulse width is 50ns or less, it is -1.0V.  
www.rohm.com  
TSZ02201-0R2R0G100240-1-2  
25.Feb.2013 Rev.002  
©2013 ROHM Co., Ltd. All rights reserved.  
2/30  
TSZ2211115001  
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