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BM28723AMUV 参数 Datasheet PDF下载

BM28723AMUV图片预览
型号: BM28723AMUV
PDF下载: 下载PDF文件 查看货源
内容描述: [BM1050AF是组合了应对高次谐波的功率因数校正(Power Factor Correction)转换器(以下简称PFC部)与DC/DC转换器(以下简称DC/DC部)的复合LSI。DC/DC部采用准谐振方式动作,有助于实现低EMI。BM1050AF内置650V耐压启动电路。PFC部、DC/DC部均外接开关MOSFET及电流检测电阻,可实现自由度高的电源设计。PFC部采用峰值电流控制。利用带AC电压过低补偿电路的乘法器、应对负载变动的电路、最大功率补偿电路等各种保护电路,提供合适的应用方案。此外,内置跳频功能,有助于实现低EMI。DC/DC部的准谐振方式为软开关动作,有助于实现低EMI。内置脉冲串模式,可降低轻负载时的功耗。内置了软启动功能、脉冲串功能、逐周期过电流限制、过电压保护、过负荷保护等各种保护功能。与微控制器间设有通信控制用端子、外部停止端子,可提供适用于各种应用的系统方案。]
分类和应用: 通信开关控制器微控制器软启动脉冲功率因数校正转换器
文件页数/大小: 82 页 / 5460 K
品牌: ROHM [ ROHM ]
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Daattaasshheeeett  
BM28723AMUV  
Operational Notes – continued  
8. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the LSI on the PCB. Incorrect mounting may result in  
damaging the LSI. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
9. Unused Input Pins  
Input pins of an LSI are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the LSI. So, unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
10. Regarding the Input Pin of the LSI  
This LSI contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N  
junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode  
or transistor. For example (refer to figure below):  
When ground > Pin A and ground > Pin B, the P-N junction operates as a parasitic diode.  
When ground > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the LSI. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the ground voltage to an input pin (and thus to the P substrate) should  
be avoided.  
Resistor  
Transistor( NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
N
P+  
N
P+  
P
P+  
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
ground  
P Substrate  
ground  
P Substrate  
ground  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
ground  
Figure 78. Example of LSI structure  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Thermal Shutdown Circuit (TSD)  
This LSI has a built-in thermal shutdown circuit that prevents heat damage to the LSI. Normal operation should always  
be within the LSI’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls  
below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the LSI from  
heat damage.  
13. Over Current Protection Circuit (OCP)  
This LSI incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the LSI should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
www.rohm.com  
© 2018 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0E900720-1-2  
31.Aug.2018 Rev.001  
76/79  
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