RT5112A
Ultra-Sonic Mode
OCP Mechanism
Bucks
To avoid acoustic noise problem when operation, the
switching frequency is designed to be always higher
than 20kHz even there is no load at output.
When the inductor current reaches the high-side
MOSFET peak current limit threshold, the high-side
MOSFET will be turned-off. The low-side MOSFET
turns on to discharge the inductor current until the
inductor current trips below the low-side MOSFET
valley current limit threshold. After high-side
MOSFET peak current limit triggered, the maximum
inductor current is decided by the inductor current
rising rate and the response delay time of the internal
network.
LDOs
Auto Mode
This mode is for general use.
EN Forced Mode
When ENForced Mode is selected, the RT5112Acan
provide higher PSRR (Power Supply Rejection Ratio)
to mitigate interference from input voltage. However,
it brings out higher quiescent current to get the
function.
LDOs
When the loading reaches the current limit threshold,
the current sent to the output will kept at current
limit level.
Bypass Mode
LDO internal power MOSFET is fully turned on. Input
voltage will pass through it to the output terminal
directly.
Under-Voltage Protection (UVP)
Behavior after UVP
Register 0x0A[7:6] is used to select the operation
after under voltage failure detected.
Channel Protection Features
The RT5112A equips Over-Current Protection, Under-
Voltage Protection and Over-Voltage Protection to prevent
the device from damages causing by abnormal operation
or fault conditions. (over-load, short-circuit, soldering
issue...etc.)
Ovrt-Voltage Protection (OVP)
Behavior after OVP
Register 0x0A[2:1] is used to select the operation
after over voltage failure detected.
Over-Current Protection (OCP)
Behavior after OCP
Register 0x37[7:6] is used to select the operation
after over-current failure detected.
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DS5112A-02 August 2019