RT2560Q
Parameter
Thermal Shutdown
Temperature
(Junction Temperature)
Thermal Shutdown
Hysteresis
Symbol
T
SD
T
SD
I
OUT
= 30mA
Test Conditions
Min
--
Typ
150
Max
--
Unit
C
C
--
20
--
Note 1.
Stresses beyond those listed
“Absolute
Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θ
JA
is measured at T
A
= 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
θ
JC
is
measured at the exposed pad of the package. The PCB copper area with exposed pad is 70mm
2
.
Note 3.
Devices are ESD sensitive. Handling precaution is recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Typical Application Circuit
RT2560Q
V
CC
1
C
IN
1µF
VCC
VOUT
3
V
OUT
C
OUT
(Effective Capacitance
1µF)
GND
7, 9 (Exposed Pad)
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
4
DS2560Q-01 February 2016
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
