FPD1050
Absolute Maximum Ratings1
Parameter
Caution! ESD sensitive device.
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain-Source Voltage (V
2
)
10
V
DS
(-3V<V <-0.5V)
GS
Gate-Source Voltage (V
)
-3
V
GS
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
(0V<V <+8V)
DS
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Drain-Source Current (I
)
I
DSS
DS
(For V <2V)
DS
Gate Current (I ) (Forward or reverse)
10
23
mA
G
RF Input Power (P
)
dBm
IN
(Under any acceptable bias state)
Channel Operating Temperature (T
)
175
°C
°C
CH
(Under any acceptable bias state)
Storage Temperature (T
)
-65 to 150
STG
(Non-Operating Storage)
3, 4, 5
3.4
80
W
%
Total Power Dissipation (P
)
TOT
6
Simultaneous Combination of Limits
(2 or more max. limits)
Notes:
1
T
=22°C unless otherwise noted; exceeding any one of these absolute max-
AMBIENT
imum ratings may cause permanent damage to the device.
2
Operating at absolute maximum V continuously is not recommended. If operation
D
at 10V is considered then I must be reduced in order to keep the part within
DS
its thermal power dissipation limits. Therefore V is restricted to <-0.5V.
GS
3
Total Power Dissipation to be de-rated as follows above 22°C: P =3.4-
TOT
(0.022W/°C)xT , where T =heatsink or ambient temperature above 22°C.
HS
HS
Example: For a 85°C carrier temperature: P =3.4-(0.022x(85-22))=2.01W
TOT
4
Total Power Dissipation (P ) defined as (P +P )–P , where P : DC Bias
TOT
DC
IN
OUT
DC
Power, P : RF Input Power, P : RF Output Power.
Users should avoid exceeding 80% of 2 or more Limits simultaneously.
Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-
plated copper heatsink or rib.
IN
OUT
5
6
Pad Layout
Pad
A
Description
Gate pad.
Pin Coordinates (μm)
130, 220
380, 220
B
C
Drain pad.
Source pad.
B
A
C
Note: Coordinates are referenced from the bottom left hand
corner of the die to the center of the bond pad opening.
Die Size (μm)
Die Thickness (μm)
Min. Bond Pad Opening (μmxμm)
470 x440
75
67x 77
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 4
Rev A0 DS080702 3.0
RFMD [ RF MICRO DEVICES ]
