FPD1050
0.75W Power
pHEMT
FPD1050
0.75W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx1050μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The double recessed gate structure
minimizes parasitics to optimize performance. The epitaxial structure and process-
ing have been optimized for reliable high-power applications. The FPD1050 is also
available in the low-cost plastic SOT89 package.
Features
28.5dBm Linear Output
Power at 12GHz
11dB Power Gain at 12GHz
14dB Max Stable Gain at
12GHz
41dBm O
IP3
45% Power-Added Efficiency
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Parameter
P
1dB
Gain Compression
S21/S12 (MSG)
Power Gain at P
1dB
(G
1dB
)
PAE
OIP
3
Saturated Drain-Source Current
(IDSS)
Maximum Drain-Source Current
(IMAX)
Transconductance (GM)
Gate-Source Leakage Current (IGSO)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
Thermal Resistivity (θJC) *
Min.
27.5
10.0
Specification
Typ.
28.5
14.0
11.0
45
39
41
Max.
Unit
dBm
dB
dB
%
dBm
dBm
Condition
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=8V, I
DS
=50% I
DSS
Matched for optimal power, tuned for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0V
V
GS
=-5V
V
DS
=1.3V, I
DS
=1mA
I
GS
=3mA
I
GD
=3mA
V
DS
>6V
260
325
520
280
15
|1.0|
|14.0|
|16.0|
45
385
mA
mA
ms
μA
V
V
V
°C/W
|12.0|
|14.5|
*Note: T
AMBIENT
=22°C, RF specifications measured at f=12GHz using CW signal.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS080702 3.0
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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