Preliminary document
Specifications in this document are tentative and subject to change.
Under development
R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group
5. Electrical Characteristics
Table 5.5
Flash Memory (Program ROM) Electrical Characteristics
Standard
Typ.
Symbol
Parameter
Conditions
Unit
Min.
Max.
(2)
(3)
−
R8C/34X, R8C/34Z Group
R8C/34W, R8C/34Y Group
−
−
−
−
times
times
µs
Program/erase endurance
100
(3)
1,000
−
−
−
−
−
Byte program time
−
60
300
(program/erase endurance ≤ 1,000 times)
Byte program time
−
−
−
60
500
400
650
4
µs
µs
µs
s
(program/erase endurance > 1,000 times)
Word program time
100
100
(program/erase endurance ≤ 1,000 times)
Word program time
(program/erase endurance > 1,000 times)
Block erase time
−
−
0.3
td(SR-SUS) Time delay from suspend request until
suspend
−
5+CPU clock × ms
3 cycles
−
Interval from erase start/restart until
following suspend request
0
−
−
−
−
−
−
µs
µs
µs
−
Time from suspend until erase restart
30+CPU clock ×
1 cycle
td(CMDRST- Time from when command is forcibly
READY)
30+CPU clock ×
1 cycle
terminated until reading is enabled
−
−
−
Program, erase voltage
Read voltage
2.7
2.7
−40
−
−
−
5.5
5.5
V
V
Program, erase temperature
85 (J version)
°C
125 (K version)
(7)
(8)
−
20
−
−
year
Data hold time
Ambient temperature = 55°C
Notes:
1. VCC = 2.7 to 5.5 V at Topr = −40 to 85°C (J version) / −40 to 125°C (K version) (under consideration), unless otherwise
specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100, 1,000), each block can be erased n times. For example, if 1,024 1-
byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
8. This data hold time includes 3,000 hours in Ta = 125°C and 7,000 hours in Ta = 85°C.
REJ03B0312-0010 Rev.0.10
Apr 09, 2010
Page 48 of 67
RENESAS [ RENESAS TECHNOLOGY CORP ]
