2002.08.30
Ver. 6.1
MITSUBISHI LSIs
M5M5W816TP - 55HI, 70HI, 85HI
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Vcc
Parameter
Test conditions
Min
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Limits
Ty p
Max
Units
V
(PD)
Power down supply voltage
Byte control input BC1# & BC2#
2.2V < Vcc(PD)
2.0V < Vcc(PD) < 2.2V
2.2V < Vcc(PD)
2.0
2.2
Vcc(PD)
V
I (BC)
V
V
V
I (S)
Chip select input S#
2.2
Vcc(PD)
2.0V < Vcc(PD) < 2.2V
Vcc=2.0V
~ +25°C
~ +40°C
~ +70°C
~ +85°C
Icc
(PD)
Power down
supply c urrent
(1)
S# > Vcc - 0.2V,
other inputs = 0 ~ Vcc
-
-
-
-
0.1
0.2
-
-
1.5
3
15
30
µA
(2)
BC1# and BC2# > Vcc - 0.2V
S# < 0.2V
other inputs = 0 ~ Vcc
Note 7: Typical parameter of Icc(PD) indicates the value for the
center of distribution at 2.0V, and not 100% tested.
(2) TIMING REQUIREMENTS
Symbol
Parameter
Power down set up time
Power down recov ery t ime
Limits
Test conditions
Min
Ty p
Max
Units
ns
ms
t
su (PD)
t
rec (PD)
0
5
(3) TIMING DIAGRAM
BC# control mode
Vcc
t
su (PD)
2.2V
BC1#
BC2#
BC1# , BC2# > Vcc-0.2V
2.7V
2.7V
t
rec (PD)
2.2V
On the BC# control mode, the lev el of S# must be f ixed at S# > Vcc-0.2V or S# < 0.2V.
S# control mode
Vcc
t
su (PD)
2.2V
S#
S# > Vcc-0.2V
2.7V
2.7V
t
rec (PD)
2.2V
8
RENESAS [ RENESAS TECHNOLOGY CORP ]
