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M5M5W816TP-70HI 参数 Datasheet PDF下载

M5M5W816TP-70HI图片预览
型号: M5M5W816TP-70HI
PDF下载: 下载PDF文件 查看货源
内容描述: 8388608 - BIT ( 524288 - WORD 16位) CMOS静态RAM [8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM]
分类和应用:
文件页数/大小: 10 页 / 139 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2002.08.30
Ver. 6.1
MITSUBISHI LSIs
M5M5W816TP - 55HI, 70HI, 85HI
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5W816TP is a f amily of low v oltage 8-Mbit static
RAMs organized as 524288-words by 16-bit, f abricated by
Mitsubishi's high-perf ormance 0.18µm CMOS technology .
The M5M5W816TP is suitable f or memory applications
where a simple interf acing , battery operating and battery
backup are the important design objectiv es.
The M5M5W816TP is packaged in a 44pin thin small
outline mount dev ice, with the outline of 400mil TSOP
TY PE(II). It giv es the best solution f or a compaction of
mounting area as well as f lexibility of wiring pattern of
printed circuit boards.
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FEATURES
Single 2.7~3.6V power supply
Small stand-by current: 0.1µA (2.0V, ty p.)
No clocks, No ref resh
Data retention supply v oltage =2.0V
All inputs and outputs are TTL compatible.
Easy memory expansion by S#, BC1# and BC2#
Common Data I/O
Three-state outputs: OR-tie capability
OE# prev ents data contention in the I/O bus
Process technology : 0.18µm CMOS
Package: 44pin 400mil TSOP TYPE(II)
Version,
Operating
temperature
Part name
M5M5W816TP -55HI
M5M5W816TP -70HI
M5M5W816TP -85HI
Power
Supply
Stand-by c urrent
Access time
Ratings (max. @3.6V)
* Typ. (@ 3.0V)
max.
55ns
70ns
85ns
Activ e
current
Icc1
25°C 40°C 25°C 40°C 70°C 85°C *(3.0V ty p.)
0.5
1.0
5.0
8.0
20
40
30mA
(10MHz)
5mA
(1MHz)
I-version
-40~+85°C
2.7~3.6V
* Typical parameter indicates the value for the
center of distribution, and not 100% tested.
PIN CONFIGURATION
A
4
A
3
A
2
A
1
A
0
S#
DQ
1
DQ
2
DQ
3
DQ
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
CC
GND
DQ
5
DQ
6
DQ
7
DQ
8
W#
A
15
A
14
A
13
A
12
A
16
A
5
A
6
A
7
OE#
BC2#
BC1#
DQ
16
DQ
15
DQ
14
DQ
13
GND
Pin
A0 ~ A18
S#
W#
OE#
BC1#
BC2#
Vcc
GND
Function
Address input
Chip select input
Write control input
Output enable input
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Power supply
Ground supply
DQ1 ~ DQ16 Data input / output
V
CC
DQ
12
DQ
11
DQ
10
DQ
9
A
18
A
8
A
9
A
10
A
11
A
17
44Pin 400mil TSOP
Outline:
44P3W
1