M16C/62P Group (M16C/62P, M16C/62PT)
5. Electrical Characteristics
(1)
Table 5.58
Electrical Characteristics (2)
Standard
Unit
Symbol
Parameter
Measuring Condition
Min.
Typ. Max.
f(BCLK)=24MHz
No division, PLL operation
ICC
Power Supply Current
In single-chip
(VCC1=VCC2=4.0V to 5.5V) mode, the output
pins are open and
Mask ROM
14
1
20
mA
mA
mA
mA
No division,
On-chip oscillation
other pins are VSS
f(BCLK)=24MHz,
No division, PLL operation
Flash
Memory
18
1.8
27
No division,
On-chip oscillation
f(BCLK)=10MHz,
VCC1=5.0V
Flash Memory
Program
15
25
mA
mA
f(BCLK)=10MHz,
VCC1=5.0V
Flash Memory
Erase
f(XCIN)=32kHz
Low power dissipation
mode, ROM (3)
Mask ROM
25
25
µA
µA
f(BCLK)=32kHz
Low power dissipation
mode, RAM (3)
Flash Memory
f(BCLK)=32kHz
Low power dissipation
420
50
µA
µA
µA
mode, Flash Memory (3)
On-chip oscillation,
Wait mode
f(BCLK)=32kHz
Mask ROM
Flash Memory
Wait mode (2)
,
7.5
Oscillation capability High
f(BCLK)=32kHz
Wait mode (2)
Oscillation capability Low
,
2.0
2.0
µA
Stop mode
Topr =25°C
6.0
20
µA
µA
µA
Stop mode
Topr =85°C
Stop mode
Topr =125°C
TBD
NOTES:
1. Referenced to VCC1=VCC2=4.0 to 5.5V, VSS = 0V at Topr = −40 to 85°C / −40 to 125°C, f(BCLK)=24MHz unless otherwise
specified. T version = −40 to 85°C, V version =−40 to 125°C.
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
Rev.2.41 Jan 10, 2006 Page 88 of 96
REJ03B0001-0241
RENESAS [ RENESAS TECHNOLOGY CORP ]
