M16C/62P Group (M16C/62P, M16C/62PT)
5. Electrical Characteristics
(1)
Table 5.31
Electrical Characteristics (2)
Standard
Unit
Symbol
Parameter
Measuring Condition
Min.
Typ. Max.
f(BCLK)=10MHz
No division
ICC
Power Supply Current
In single-chip
(VCC1=VCC2=2.7V to 3.6V) mode, the output
pins are open and
Mask ROM
8
1
11
mA
mA
mA
mA
No division,
On-chip oscillation
other pins are VSS
f(BCLK)=10MHz,
No division
Flash
Memory
8
13
No division,
On-chip oscillation
1.8
f(BCLK)=10MHz,
VCC1=3.0V
Flash Memory
Program
12
22
mA
mA
f(BCLK)=10MHz,
VCC1=3.0V
Flash Memory
Erase
f(XCIN)=32kHz
Low power dissipation
mode, ROM (3)
Mask ROM
25
25
µA
µA
f(BCLK)=32kHz
Low power dissipation
mode, RAM (3)
Flash Memory
f(BCLK)=32kHz
Low power dissipation
420
45
µA
µA
µA
mode, Flash Memory (3)
On-chip oscillation,
Wait mode
f(BCLK)=32kHz
Mask ROM
Flash Memory
Wait mode (2)
,
6.0
Oscillation capability High
f(BCLK)=32kHz
Wait mode (2)
Oscillation capability Low
,
1.8
0.7
µA
µA
Stop mode
Topr =25°C
3.0
Idet4
Idet3
Low Voltage Detection Dissipation Current (4)
Reset Area Detection Dissipation Current (4)
0.6
0.4
4
2
µA
µA
NOTES:
1. Referenced to VCC1=VCC2=2.7 to 3.3V, VSS = 0V at Topr = −20 to 85°C / −40 to 85°C, f(BCLK)=10MHz unless otherwise
specified.
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
4. Idet is dissipation current when the following bit is set to “1” (detection circuit enabled).
Idet4: VC27 bit in the VCR2 register
Idet3: VC26 bit in the VCR2 register
Rev.2.41 Jan 10, 2006 Page 66 of 96
REJ03B0001-0241
RENESAS [ RENESAS TECHNOLOGY CORP ]
