HAT3010R
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Reverse Recovery Time trr (ns)
50
1000
500
Body-Drain Diode Reverse
Recovery Time
20
10
Tc = –25°C
5
75°C
2
1
0.5
–0.1 –0.3
V
DS
= –10 V
Pulse Test
–1
–3
–10
–30
–100
25°C
200
100
50
20
10
–0.1 –0.3
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
–1
–3
–10
–30
–100
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
5000
2000
0
Reverse Drain Current
I
DR
(A)
Dynamic Input Characteristics
V
DD
= –10 V
–25 V
–50 V
Capacitance C (pF)
–20
–4
1000
500
200
100
50
Ciss
Drain to Source Voltage
–40
V
DS
–60
V
DD
= –10 V
–25 V
–50 V
I
D
= –5 A
0
8
16
V
GS
–8
Coss
Crss
–12
–80
–16
20
10
0
V
GS
= 0
f = 1 MHz
–10
–20
–30
–40
–50
–100
24
32
–20
40
Drain to Source Voltage V
DS
(V)
Gate Charge
Qg (nc)
Switching Characteristics
1000
300
100
30
10
3
td(off)
td(on)
tf
V
GS
= –10 V, V
DD
= –30 V
PW = 5
µs,
duty
≤
1 %
–1
–3
–10
–30
–100
tr
–10
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Pulse Test
Switching Time t (ns)
–8
–
10 V
–6
–
5 V
V
GS
= 0, 5 V
–4
–2
1
–0.1 –0.3
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain Current
I
D
(A)
Source to Drain Voltage
V
SD
(V)
Rev.10.00 Sep 07, 2005 page 7 of 9
Gate to Source Voltage
V
GS
(V)
0
RENESAS [ RENESAS TECHNOLOGY CORP ]
