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HAT3010R 参数 Datasheet PDF下载

HAT3010R图片预览
型号: HAT3010R
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N / P沟道功率MOS FET高速电源开关 [Silicon N / P Channel Power MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关光电二极管
文件页数/大小: 10 页 / 116 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT3010R
P Channel
Maximum Safe Operation Area
–100
0
µ
1m
s
s
10
10
µ
s
Typical Output Characteristics
–10
–10 V
Pulse Test
–6 V
–4.5 V
–6
–3.5 V
I
D
(A)
Drain Current
Drain Current
PW
DC
=1
Op
0m
era
s
–1
tio
n(
PW
1
Note
Operation in
0s
7
)
–0.1 this area is
limited by R
DS (on)
I
D
(A)
–10
–8
–4
–3 V
–2
V
GS
= –2.5 V
0
–0.01
Ta = 25°C
1 shot Pulse
–1
–3
–10
–30
–100
–0.001
–0.1 –0.3
0
–2
–4
–6
–8
–10
Drain to Source Voltage V
DS
(V)
Note 7:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
–10
V
DS
= –10 V
Pulse Test
–1.0
Pulse Test
I
D
(A)
–8
–0.8
–6
–0.6
Drain Current
–4
Tc = 75°C
25°C
–25°C
0
0
–1
–2
–3
–4
–5
–0.4
I
D
= –5 A
–0.2
–2 A
–1 A
–2
0
0
–5
–10
–15
–20
Gate to Source Voltage
V
GS
(V)
Gate to Source Voltage
V
GS
(V)
1.0
Pulse Test
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
Drain to Source on State Resistance
R
DS (on)
(Ω)
0.20
–5 V
0.15
I
D
= –1 A, –2 A
V
GS
= –4.5 V
0.10
–5 V
0.05
–10 V
0
–40
0
40
80
120
160
–1 A, –2 A
0.2
0.1
0.05
V
GS
= –4.5 V
–10 V
0.02
0.01
–1
–3
–10
–30
–100
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
Rev.10.00 Sep 07, 2005 page 6 of 9