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HAT3010R 参数 Datasheet PDF下载

HAT3010R图片预览
型号: HAT3010R
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N / P沟道功率MOS FET高速电源开关 [Silicon N / P Channel Power MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关光电二极管
文件页数/大小: 10 页 / 116 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT3010R
Main Characteristics
N Channel
Maximum Safe Operation Area
100
10
10
Typical Output Characteristics
10 V
4V
I
D
(A)
DC
Op
PW
1m
=1
s
s
s
I
D
(A)
10
10
era
0m
0
µ
µ
s
3V
Pulse Test
8
1
tio
Drain Current
0.1
Operation in
this area is
limited by R
DS (on)
Ta = 25°C
1 shot Pulse
1
Note
0s
6
)
Drain Current
n(
PW
6
4
0.01
2
2.5 V
V
GS
= 2 V
0
2
4
6
8
10
0.001
0.1
0
0.3
1
3
10
30
100
Drain to Source Voltage V
DS
(V)
Note 6:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
10
V
DS
= 10 V
Pulse Test
300
Pulse Test
I
D
(A)
8
200
I
D
= 5 A
100
2A
1A
0
5
10
15
20
6
Drain Current
4
Tc = 75°C
2
25°C
–25°C
0
0
1
2
3
4
5
0
Gate to Source Voltage
V
GS
(V)
Gate to Source Voltage
V
GS
(V)
1.0
Pulse Test
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
1 A, 2 A
0.06
I
D
= 5 A
V
GS
= 4.5 V
1 A, 2 A, 5 A
10 V
Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
V
GS
= 4.5 V
10 V
0.04
0.02
0.01
0.02
1
3
10
30
100
0
–40
0
40
80
120
160
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
Rev.10.00 Sep 07, 2005 page 4 of 9