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HAT2164H-EL-E 参数 Datasheet PDF下载

HAT2164H-EL-E图片预览
型号: HAT2164H-EL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N通道功率MOS FET电源开关 [Silicon N Channel Power MOS FET Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关
文件页数/大小: 8 页 / 90 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT2164H
Main Characteristics
Power vs. Temperature Derating
40
500
100
10
µ
0
µ
s
1m
s
PW
s
DC
= 1
Op
0 m
era
s
tio
n
Maximum Safe Operation Area
Pch (W)
30
I
D
(A)
10
Channel Dissipation
10
20
Drain Current
1 Operation in
this area is
limited by R
DS(on)
0.1
0.01
0.1
Tc = 25°C
1 shot Pulse
0.3
1
3
10
30
100
10
0
50
100
150
200
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
10 V
4V
Pulse Test
3.2 V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
3.0 V
60
I
D
(A)
Drain Current
80
80
60
2.8 V
25°C
Tc = 75°C
20
-25°C
Drain Current
40
2.6 V
V
GS
= 2.4 V
40
20
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
10
Pulse Test
Drain to Source Voltage V
DS(on)
(mV)
5
V
GS
= 4.5 V
10 V
2
150
I
D
= 50 A
100
20 A
10 A
50
1
1
3
10
30
100
300
1000
0
4
8
12
16
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.5.00 Sep 26, 2005 page 3 of 7