HAT2164H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
±20
—
—
0.8
—
—
78
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.5
3.0
130
7600
1050
470
0.5
50
22
10
18
60
65
15
0.82
40
Max
—
—
±10
1
2.3
3.1
4.4
—
—
—
—
—
—
—
—
—
—
—
—
1.07
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 30 A, V
GS
= 10 V
Note4
I
D
= 30 A, V
GS
= 4.5 V
Note4
I
D
= 30 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 60 A
V
GS
= 10 V, I
D
= 30 A,
V
DD
≅
10 V, R
L
= 0.33
Ω,
Rg = 4.7
Ω
IF = 60 A, V
GS
= 0
Note4
IF = 60 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
Rev.5.00 Sep 26, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
