HAT2114R, HAT2114RJ
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain Source Voltage
5000
500
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
2000
1000
500
200
100
50
Crss
20
10
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Drain Source Voltage V
DS
(V)
Coss
Ciss
200
100
50
20
10
0.1
0.3
1
3
10
30
I
DR
(A)
100
Reverse Drain Current
Dynamic Input Characteristics
100
V
DS
(V)
V
GS
(V)
Switching Characteristics
20
1000
300
100
td(off)
30
10
3
1
0.1
tr
td(on)
tf
V
GS
= 10 V, V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0.3
1
3
Drain Current
10
I
D
(A)
30
100
I
D
= 6 A
V
GS
Drain to Source Voltage
12
40
8
20
V
DD
= 50V
25V
10V
8
16
24
32
Gate Charge
Qg (nc)
4
0
40
0
Rev.1.00, Oct.06.2003, page 6 of 9
Gate to Source Voltage
Switching Time t (ns)
80 V = 50 V
DD
25 V
10 V
60
V
DS
16
RENESAS [ RENESAS TECHNOLOGY CORP ]
