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HAT2114RJ 参数 Datasheet PDF下载

HAT2114RJ图片预览
型号: HAT2114RJ
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道功率MOS FET高速电源开关 [Silicon N Channel Power MOS FET High Speed Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 10 页 / 109 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT2114R, HAT2114RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Pch (W)
Maximum Safe Operation Area
100
30
(A)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
10s)
10
10
PW
µ
s
3.0
10
3
1
0.3
DC
Op
e
rat
ion
Channel Dissipation
Drain Current I
D
=1
1m
0
µ
s
s
s
0m
2.0
1
Dr
ive
2
1.0
Op
ive
Dr
a
er
Op
n
tio
(P
W
No
Operation in
0.1
< 1
te
this area is
0s
6
)
limited by R
DS(on)
0.03
er
at
ion
0
50
100
Case Temperature
150
Ta (°C)
200
0.01 Ta = 25°C
0.003 1 shot Pulse
1 Drive Operation
0.001
0.1 0.3
1
3
10
Drain to Source Voltage
30
100
V
DS
(V)
Note 6: When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
10
10 V
4V
(A)
Typical Transfer Characteristics
10
V
DS
= 10 V
Pulse Test
(A)
Drain Current I
D
Pulse Test
8
8
Drain Current I
D
6
3V
4
6
4
Tc = 75°C
2
25°C
−25°C
0
1
2
3
Gate to Source Voltage
4
5
V
GS
(V)
2
V
GS
= 2.5 V
0
2
4
6
Drain to Source voltage
8
10
V
DS
(V)
Rev.1.00, Oct.06.2003, page 4 of 9